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 ON Semiconductort
Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSA28 80 80 12 500 625 5.0 1.5 12 -55 to +150 MPSA29 100 100 Unit Vdc Vdc Vdc mAdc
MPSA28 MPSA29*
*ON Semiconductor Preferred Device
1
mW mW/C Watts mW/C C
2
3
CASE 29-11, STYLE 1 TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W BASE 2
COLLECTOR 3
EMITTER 1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) (VCE = 80 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) MPSA28 MPSA29 ICES MPSA28 MPSA29 IEBO -- -- -- -- -- -- 500 500 100 nAdc V(BR)CES MPSA28 MPSA29 V(BR)CBO MPSA28 MPSA29 V(BR)EBO ICBO -- -- -- -- 100 100 nAdc 80 100 12 -- -- -- -- -- -- Vdc nAdc 80 100 -- -- -- -- Vdc Vdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
March, 2001 - Rev. 1
Publication Order Number: MPSA28/D
MPSA28 MPSA29
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON
CHARACTERISTICS(1)
hFE 10,000 10,000 VCE(sat) -- -- VBE(on) -- 0.7 0.8 1.4 1.2 1.5 2.0 Vdc -- -- -- -- Vdc --
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.01 mAdc) (IC = 100 mAdc, IB = 0.1 mAdc) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = hfe S ftest. fT Cobo 125 -- 200 5.0 -- 8.0 MHz pF
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2
MPSA28 MPSA29
VCE = 5.0 V h FE , DC CURRENT GAIN (k) 200 100 50 20 10 5.0 2.0 1.0 1.0 2.0 5.0 10 20 50 100 200 500 1k V, VOLTAGE (VOLTS) TA = 125C TA = 25C TA = -55C
1.8 1.6 1.4 1.2 1.0 0.8 0.6 1.0 2.0 5.0 VCE(S) @ IC/IB = 1.0 k VBE(S) @ IC/IB = 1.0 k TA = 25C VBE(ON) @ VCE = 5.0 V
10
20
50
100
200
500
1k
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. "ON" Voltages
0 qV, TEMPERATURE COEFFICIENT (mV/ C) -1.0 qVC for VCE(S) -2.0 -3.0 -4.0
qVB for VBE
2.4 25C to 125C -55C to 25C VCE , COLLECTOR VOLTAGE (VOLTS) TA = 25C 2.0 IC = 500 mA 1.6 1.2 0.8 0.4 IC = 250 mA
25C to 125C -55C to 25C
IC = 10 mA
IC = 100 mA
-5.0 1.0
2.0
5.0
10
20
50
100
200
500
0.2
1.0 2.0
10
20
100 200
1 k 1.5 k
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 3. Temperature Coefficients
Figure 4. Collector Saturation Region
1k h fe , HIGH FREQUENCY CURRENT GAIN I C , COLLECTOR CURRENT (mA) 500 200 100 50 20 10 1.0 TA = 25C 1.0 ms 1.0 s TC = 25C 100 ms
10 5.0 2.0 1.0 0.5 0.2 0.1 0.3 0.5 1.0 2.0 5.0 10 20 50 100 200 300
VCE = 5.0 V TA = 25C f = 100 MHz
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSA28 VALID FOR DUTY CYCLE v 10% MPSA29 2.0 5.0 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 5. Active Region -- Safe Operating Area
Figure 6. High Frequency Current Gain
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3
MPSA28 MPSA29
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
A R P
SEATING PLANE
B
F
L K D
XX G H V
1
J
C N N
SECTION X-X
DIM A B C D F G H J K L N P R V
CASE 029-11 (TO-226AA) ISSUE AD
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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4
MPSA28/D


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